BS108 Datasheet, PDF (2/4 Pages) Motorola, Inc – 200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL

BS108
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µA)
V(BR)DSS
200
—
Vdc
—
Zero Gate Voltage Drain Current
(VDSS = 130 Vdc, VGS = 0)
IDSS
nAdc
—
—
30
Gate–Body Leakage Current
(VGS = 15 Vdc, VDS = 0)
ON CHARACTERISTICS ⁽²⁾
IGSSF
nAdc
—
—
10
Gate Threshold Voltage
(ID = 1.0 mA, VDS = VGS)
VGS(th)
Vdc
0.5
—
1.5
Static Drain–to–Source On–Resistance
(VGS = 2.0 Vdc, ID = 50 mA)
(VGS = 2.8 Vdc, ID = 100 mA)
Drain Cutoff Current
(VGS = 0.2 V, VDS = 70 V)
rDS(on)
—
—
Ohms
—
10
—
8.0
IDSX
mA
—
—
25
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Ciss
pF
—
—
150
Output Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Coss
pF
—
—
30
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Crss
pF
—
—
10
SWITCHING CHARACTERISTICS
Turn–On Time (See Figure 1)
td(on)
—
—
15
ns
Turn–Off Time (See Figure 1)
td(off)
—
—
15
ns
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%.
RESISTIVE SWITCHING
PULSE GENERATOR
50
+25 V
Vin
40 pF
23
20 dB
50 Ω ATTENUATOR
50 1.0 M
Figure 1. Switching Test Circuit
TO SAMPLING SCOPE
50 Ω INPUT
Vout
ton
90%
toff
90%
OUTPUT
INVERTED ^Vout
INPUT
10 V
Vin
50%
10%
10%
90%
PULSE 50%
WIDTH
Figure 2. Switching Waveforms
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data