BS108 Datasheet, PDF (1/4 Pages) Motorola, Inc – 200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Logic Level TMOS
N–Channel Enhancement Mode
This TMOS FET is designed for high voltage, high speed
switching applications such as line drivers, relay drivers, CMOS
logic, microprocessor or TTL to high voltage interface and high
voltage display drivers.
• Low Drive Requirement, VGS = 3.0 V max
• Inherent Current Sharing Capability Permits Easy Paralleling of
many Devices
®
1 DRAIN
2
GATE
3 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Gate–Source Voltage
Drain Current
Continuous(1)
Pulsed(2)
VDSS
200
Vdc
VGS
±20
Vdc
mAdc
ID
250
IDM
500
Total Power Dissipation
@ TA = 25°C
Derate above TA = 25°C
Operating and Storage Temperature Range
PD
TJ, Tstg
350
6.4
– 55 to +150
mW
mW/°C
°C
v v ^{1. The Power Dissipation of the package may result in a lower continuous drain current.}
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Order this document
by BS108/D
BS108
200 VOLTS
N–CHANNEL TMOS
POWER FET
LOGIC LEVEL
1
2
3
CASE 29–04, STYLE 30
TO–92
TMOS is a registered trademark of Motorola, Inc.
© Motorola, Inc. 1997