BDC02D Datasheet, PDF (2/4 Pages) Motorola, Inc – One Watt Amplifier Transistor

BDC02D
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –100 mA, VCE = –1.0 V)
(IC = –500 mA, VCE = –2.0 V)
Collector – Emitter Saturation Voltage(1)
(IC = –1000 mA, IB = –100 mA)
Collector – Emitter On Voltage(1)
(IC = –1000 mA, VCE = –1.0 V)
DYNAMIC CHARACTERISTICS
hFE
40
25
VCE(sat)
—
VBE(on)
—
—
400
—
–0.7
Vdc
–1.2
Vdc
Current Gain Bandwidth Product
(IC = –200 mA, VCE = –5.0 V, f = 20 MHz)
Output Capacitance
(VCB = –10 V, IE = 0, f = 1.0 MHz)
v 1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
fT
50
—
MHz
Cob
—
30
pF
400
TJ = 125°C
200
25°C
–55°C
100
80
60
40
–0.5 –0.7 –1.0
–2.0 –3.0
–5.0 –7.0 –10
–20 –30
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
–50 –70 –100
VCE = –1.0 V
–200 –300 –500
–1.0
TJ = 25°C
–0.8
–0.6
IC = –10 mA
–50
mA
–100 mA
–250 mA –500 mA
–0.4
–0.2
0
–0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
–1.0
TJ = 25°C
–0.8
VBE(sat) @ IC/IB = 10
–0.6
VBE(on) @ VCE = –1.0 V
–0.4
–0.2
VCE(sat) @ IC/IB = 10
0
–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data