BDC02D Datasheet, PDF (1/4 Pages) Motorola, Inc – One Watt Amplifier Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
One Watt Amplifier Transistor
PNP Silicon
Order this document
by BDC02D/D
BDC02D
COLLECTOR
2
3
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
BDC02D
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–100
–100
–5.0
–0.5
1.0
8.0
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
2.5
Watts
20
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
125
°C/W
Thermal Resistance, Junction to Case
R_qJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Voltage
(IC = –10 mA, IB = 0)
Collector Cutoff Current
(VCB = –100 V, IE = 0)
Emitter Cutoff Current
(IC = 0, VEB = –5.0 V)
1
23
CASE 29–05, STYLE 14
TO–92 (TO–226AE)
Symbol
Min
Max
Unit
V(BR)CEO –100
ICBO
—
IEBO
—
—
–0.1
–100
Vdc
mAdc
nAdc
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1