BDB02C Datasheet, PDF (2/4 Pages) Motorola, Inc – One Watt Amplifier Transistors

BDB02C,D
400
200
TJ = 125°C
25°C
–55°C
100
80
60
40
–0.5 –0.7 –1.0
–2.0 –3.0
–5.0 –7.0 –10
–20 –30
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
–50 –70 –100
VCE = –1.0 V
–200 –300 –500
–1.0
TJ = 25°C
–0.8
–0.6
IC = –10 mA
–50
mA
–100 mA
–250 mA –500 mA
–0.4
–0.2
0
–0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
–0.8
–1.2
–1.6
–2.0
θ_VB for VBE
–2.4
–2.8
–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
IC, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
–1.0
TJ = 25°C
–0.8
VBE(sat) @ IC/IB = 10
–0.6
VBE(on) @ VCE = –1.0 V
–0.4
–0.2
VCE(sat) @ IC/IB = 10
0
–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
IC, COLLECTOR CURRENT (mA)
Figure 3. On Voltages
100
70
Cibo
TJ = 25°C
50
30
20
10
7.0
5.0
–0.1 –0.2
–0.5 –1.0 –2.0 –5.0 –10 –20
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
Cobo
–50 –100
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data