BDB02C Datasheet, PDF (1/4 Pages) Motorola, Inc – One Watt Amplifier Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BDB02C/D
One Watt Amplifier Transistors
PNP Silicon
COLLECTOR
3
2
BASE
MAXIMUM RATINGS
1
EMITTER
Rating
Symbol BDB02C BDB02D
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VCEO
VCES
VEBO
IC
PD
–80
–100
–80
–100
–5.0
–0.5
1.0
8.0
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Total Device Dissipation
PD
2.5
Watt
@ TC = 25°C
20
mW/°C
Derate above 25°C
Operating and Storage Junction TJ, Tstg
– 55 to +150
°C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
125
°C/W
Thermal Resistance, Junction to Case
R_qJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Voltage
(IC = –10 mA, IB = 0)
Collector Cutoff Current
(VCB = –80 V, IE = 0)
(VCB = –100 V, IE = 0)
Emitter Cutoff Current (IC = 0, VEB = –5.0 V)
ON CHARACTERISTICS
BDB02C
BDB02D
BDB02C
BDB02D
DC Current Gain
(IC = –100 mA, VCE = –1.0 V)
(IC = –500 mA, VCE = –2.0 V)
Collector – Emitter Saturation Voltage(1) (IC = –1000 mA, IB = –100 mA)
Collector – Emitter On Voltage(1) (IC = –1000 mA, VCE = –1.0 V)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = –200 mA, VCE = –5.0 V, f = 20 MHz)
Output Capacitance (VCB = –10 V, IE = 0, f = 1.0 MHz)
v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
BDB02C,D
1
23
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Symbol
Min
Max
Unit
V(BR)CEO
ICBO
IEBO
–80
–100
—
—
—
—
—
–0.1
–0.1
–100
Vdc
mAdc
nAdc
hFE
40
25
VCE(sat)
—
VBE(on)
—
—
400
—
–0.7
Vdc
–1.2
Vdc
fT
50
—
MHz
Cob
—
30
pF
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996