MRF644 Datasheet, PDF (1/4 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
. . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
• Specified 12.5 Volt, 470 MHz Characteristics —
Output Power = 25 Watts
Minimum Gain = 6.2 dB
Efficiency = 60%
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Built–In Matching Network for Broadband Operation
• Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @
16–Volt High Line and 50% Overdrive
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRF644/D
MRF644
25 W, 470 MHz
CONTROLLED Q
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Symbol
R_θJC
Min
16
36
4.0
—
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CASE 316–01, STYLE 1
Value
16
36
4.0
4.0
103
0.59
– 65 to +150
Max
1.7
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Unit
°C/W
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
5.0
mAdc
(continued)
MRF644
1