MRF5583 Datasheet, PDF (1/4 Pages) Motorola, Inc – SURFACE MOUNT HIGH-FREQUENCY TRANSISTOR PNP SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF5583/D
The RF Line
PNP Silicon
High-Frequency Transistor
. . . designed for amplifier, oscillator or frequency multiplier applications in
industrial equipment. Suitable for use as a Class A, B or C output driver or
pre–driver stages in VHF and UHF.
• Low Cost SORF Plastic Surface Mount Package
• Guaranteed RF Specification — |S21|2
• S–Parameter Characterization
• Tape and Reel Packaging Options Available by adding suffix:
R1 suffix = 500 units per reel
R2 suffix = 2,500 units per reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Operating and Storage Junction
Temperature Range
VCEO
– 30
V
VCBO
– 30
V
VEBO
– 3.0
V
IC
– 500
mA
TJ, Tstg – 55 to +150
°C
DEVICE MARKING
MRF5583 = 5583
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Storage Temperature
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mA)
Collector–Base Breakdown Voltage (IC = –10 µA)
Emitter–Base Breakdown Voltage (IE = –100 µA)
Collector Cutoff Current (VCB = – 20 V)
Emitter Cutoff Current (VEB = – 2.0 V)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
DC Current Gain (IC = – 40 mA, VCE = – 2.0 V)
hFE
DC Current Gain (IC = –100 mA, VCE = – 2.0 V)
DC Current Gain (IC = – 300 mA, VCE = – 5.0 V)
Collector–Emitter Saturation Voltage (IC = –100 mA, IB = –10 mA)
Base–Emitter On Voltage (IC = –100 mA, VCE = – 2.0 V)
VCE(sat)
VBE(on)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = – 35 mA, VCE = –15 V, f = 100 MHz)
Insertion Gain (VCE = –15 V, IC = – 35 mA, f = 250 MHz)
fT
|S21|2
Symbol
PD
Tstg
R_θJA
Min
– 30
– 30
–3
—
—
20
25
15
—
—
—
12.5
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF5583
IC = – 500 mA
SURFACE MOUNT
HIGH–FREQUENCY
TRANSISTOR
PNP SILICON
CASE 751–05, STYLE 1
(SO–8)
Max
Unit
1.0
Watt
8.0
mW/°C
150
°C
125
°C/W
Typ
—
—
—
—
—
—
—
—
—
—
2100
15.5
Max
—
—
—
– 1.0
– 0.5
—
100
—
0.8
1.8
—
—
Unit
V
V
V
µA
µA
—
V
V
MHz
dB
MRF5583
1