MMDF2N02E Datasheet, PDF (1/10 Pages) Motorola, Inc – DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MMDF2N02E/D
™ Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Dual N-Channel
MMDF2N02E
Field Effect Transistors
MiniMOS™ devices are an advanced series of power MOSFETs
which utilize Motorola’s TMOS process. These miniature surface
mount MOSFETs feature ultra low RDS(on) and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a low reverse recovery time. MiniMOS devices are designed
for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dc–dc
converters, and power management in portable and battery
powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor G
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
®
D
S
DUAL TMOS MOSFET
3.6 AMPERES
25 VOLTS
RDS(on) = 0.1 OHM
CASE 751–05, Style 11
SO–8
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• IDSS Specified at Elevated Temperatures
• Avalanche Energy Specified
• Mounting Information for SO–8 Package Provided
Source–1
Gate–1
Source–2
Gate–2
18
27
36
45
Top View
Drain–1
Drain–1
Drain–2
Drain–2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C ⁽¹⁾
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 6.0 mH, RG = 25 Ω)
Thermal Resistance, Junction to Ambient ⁽¹⁾
Maximum Lead Temperature for Soldering Purposes, 0.0625″ from case for 10 seconds
VDSS
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
R_θJA
TL
25
± 20
3.6
2.5
18
2.0
– 55 to 150
245
62.5
260
Vdc
Vdc
Adc
Apk
W
°C
mJ
°C/W
°C
DEVICE MARKING
F2N02
(1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF2N02ER2
13″
12 mm embossed tape
2500
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, E–FET and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
REV 5
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