2N6240 Datasheet, PDF (1/4 Pages) Motorola, Inc – Silicon controlled Rectifiers Reverse Blocking Triode Thyristors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . PNPN devices designed for high volume consumer applications such as
temperature, light, and speed control; process and remote control, and warning
systems where reliability of operation is important.
• Passivated Surface for Reliability and Uniformity
• Power Rated at Economical Prices
• Practical Level Triggering and Holding Characteristics
• Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Recommended Electrical Replacement for C106
Order this document
by 2N6240/D
2N6240
SCRs
4 AMPERES RMS
400 VOLTS
G
A
K
A
G
AK
CASE 77-08
(TO-225AA)
STYLE 2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
*Repetitive Peak Forward and Reverse Blocking Voltage(1)
(1/2 Sine Wave)
(RGK = 1000 ohms, TC = –40 to +110°C)
*Non–repetitive Peak Reverse Blocking Voltage
(1/2 Sine Wave, RGK = 1000 ohms,
TC = –40° to +110°C)
*Average On–State Current
(TC = –40 to + 90°C)
(TC = +100°C)
*Surge On–State Current
(1/2 Sine Wave, 60 Hz, TC = +90°C)
(1/2 Sine Wave, 1.5 ms, TC = +90°C)
Circuit Fusing
(t = 8.3 ms)
Symbol
VDRM
or
VRRM
VRSM
IT(AV)
ITSM
I2t
Value
400
450
2.6
1.6
25
35
2.6
Unit
Volts
Volts
Amps
Amps
A2s
*Peak Gate Power
(Pulse Width = 10 µs, TC = 90°C)
PGM
0.5
Watts
*Indicates JEDEC Registered Data.
(continued)
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
1
© Motorola, Inc. 1999