SYS8512FKX-70 Datasheet, PDF (2/7 Pages) MOSAIC – 512K x 8 SRAM MODULE

ISSUE 5.0 November 1999
SYS8512FKX-70/85/10/12
DC OPERATING CONDITIONS
Absolute Maximum Ratings ⁽¹⁾
Parameter
Symbol min typ max
unit
Voltage on any pin relative to V
V
-0.3V
-
+7
V
SS
T
Power Dissipation
P_T
-
1
-
W
Storage Temperature
T_STG
-55
-
+150
o_C
Notes :
(1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at those or any other conditions above those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
(2) V_t can be -3.5V pulse of less than 20ns.
Recommended Operating Conditions
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temperature
Symbol min
V_CC
4.5
V_IH
2.2
V_IL
-0.3
T
0
A
T_AI
-40
typ max
5.0
5.5
- Vcc + 0.3
-
0.8
-
70
-
85
unit
V
V
V
o_C
o_{C (I)}
DC Electrical Characteristics (V_CC=5V±10%)
TA 0 to 70^OC
Parameter
Symbol Test Condition
min
I/P Leakage Current A0~A16, OE I_LI1 0V - V_IN - V_CC
-
Output Leakage Current
D0~D7 I
LO
CS = V_IH, V_I/O = GND to V_CC
-
Operating Supply Current
I_CC CS = V_IL ,I_I/O = 0mA, V_IL - V_IN - V_CC-2.1V
-
Average Supply Current TTL levels I_CC1 Min. Cycle, CS = V_IL, V_IN = V_IL/V_CC-2.1V
-
CMOS levels
I_CC2
Min. Cycle, CS - 0.2V, V = 0.2V/V -0.2V
IN
CC
-
Standby Supply Current
TTL levels I_SB
CS,A17-A18 = V -2.1V, V - V - V -2.1V
CC
IL
IN
CC
-
CMOS levels I_SB1 CS,A17-A18 = V_CC-0.2V, 0.2 - V_IN - V_CC-0.2V -
-L Part I_SB2 As above
-
typ⁽²⁾ max Unit
- ±8 µA
- ±8 µA
16 45 mA
70 110 mA
24 40 mA
5 12 mA
0.2
8 mA
10 500 µA
Output Voltage
V
OL
I_OL = 2.1mA
V
OH
I_OH = -1.0mA
Typical values are at V =5.0V,T =25^oC and specified loading.
CC
A
-
- 0.4 V
2.4
-
-V
2