MSC0207W Datasheet, PDF (2/6 Pages) MORE Semiconductor Company Limited – -20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET

MSC0207W
Electrical Characteristics (T_A=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics ^{(Note 3)}
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics ^(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics ^{(Note 4)}
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage ^{(Note 3)}
Symbol
Condition
Min Typ Max Unit
BV_DSS
I_DSS
I_GSS
V_GS=0V I_D=-250μA
V_DS=-20V,V_GS=0V
V_GS=±12V,V_DS=0V
-20 -
-
V
-
-
-1
μA
-
- ±100 nA
V_GS(th)
R_DS(ON)
g_FS
V_DS=V_GS,I_D=-250μA
V_GS=-4.5V, I_D=-6.5A
V_GS=-2.5V, I_D=-5A
V_DS=-5V,I_D=3A
-0.6 -0.8 -1.4
V
-
21
27
mΩ
-
29
39
mΩ
- 10
-
S
C_lss
- 2100 -
PF
V_DS=-10V,V_GS=0V,
C_oss
- 450
-
PF
F=1.0MHz
C_rss
- 300
-
PF
t_d(on)
- 25
-
nS
t_r
V_DD=-10V, ID=-1A,
- 30
-
nS
t_d(off)
V_GS=-4.5V,R_GEN=6Ω
- 70
-
nS
t_f
- 50
-
nS
Q_g
- 17
-
nC
Q_gs
V_DS=-10V,I_D=-6.5A,V_GS=-4.5V -
4.1
-
nC
Q_gd
- 4.3
-
nC
V_SD
V_GS=0V,I_S=-7A
-
-
-1.2
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
MORE Semiconductor Company Limited
http://www.moresemi.com
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