MSC0207W Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – -20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET

MSC0207W
-20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET
General Features
● V_DS = -20V,I_D = -7A
R_DS(ON) < 27mΩ @ V_GS=-4.5V
R_DS(ON) < 39mΩ @ V_GS=-2.5V
● High power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Lead Free
Application
● Motor drive
● Load switch
● Power management
PIN Configuration
Marking and pin assignment
SOP-8 top view
D1
D2
G1
G2
S1
S2
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
MSC0207W
MSC0207W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-20
±12
-7
-40
3.0
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
42
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6