PM50RL1B120 Datasheet, PDF (9/9 Pages) Mitsubishi Electric Semiconductor – INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(TYPICAL)
10⁰
7
5
3
2
10^–1
7
5
3
2
10^–2 _{Single Pulse}
7
5
IGBT part;
3 ^{Per unit base = Rth(j-c)Q = 0.27°C/ W}
2 ^{FWDi part;}
Per unit base = Rth(j-c)F = 0.47°C/ W
10^–3_{10–5 2 3 5 710–42 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7101}
t(sec)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
2.5
VD = 15V
2.0
1.5
1.0
0.5
0
0
Tj = 25°C
Tj = 125°C
5 10 15 20 25 30 35
COLLECTOR CURRENT IC (A)
DIODE FORWARD CHARACTERISTICS
(TYPICAL)
10²
7 ^{VD = 15V}
5
4
3
2
10¹
7
5
4
3
2
10⁰
0
Tj = 25°C
Tj = 125°C
0.5 1.0 1.5 2.0 2.5 3.0
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50RL1B120
FLAT-BASE TYPE
INSULATED PACKAGE
(Brake Part)
OUTPUT CHARACTERISTICS
(TYPICAL)
30
Tj = 25°C
15V
VD = 17V
25
13V
20
15
10
5
0
0
0.5
1.0
1.5
2.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS
(TYPICAL)
2.4
2.2
2.0
1.8
1.6
1.4
IC = 25A
1.2
Tj = 25°C
Tj = 125°C
1.0
12 13 14 15 16 17 18
CONTROL POWER SUPPLY VOLTAGE VD (V)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(TYPICAL)
10⁰
7
5
3
2
10^–1
7
5
3
2
10^–2 _{Single Pulse}
7
5
IGBT part;
3 ^{Per unit base = Rth(j-c)Q = 0.39°C/ W}
2 ^{FWDi part;}
Per unit base = Rth(j-c)F = 0.67°C/ W
10^–3_{10–5 2 3 5 710–42 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7101}
t(sec)
May 2009
9