PM50RL1B120 Datasheet, PDF (8/9 Pages) Mitsubishi Electric Semiconductor – INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

MITSUBISHI <INTELLIGENT POWER MODULES>
PM50RL1B120
FLAT-BASE TYPE
INSULATED PACKAGE
SWITCHING LOSS CHARACTERISTICS
(TYPICAL)
7.0
VCC = 600V
6.0
VD = 15V
Tj = 25°C
Eon
5.0
Tj = 125°C
Inductive load
4.0
3.0
Eoff
2.0
1.0
0
0 10 20 30 40 50 60 70
COLLECTOR CURRENT IC (A)
DIODE REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
1.0
VCC = 600V
0.9 _{VD = 15V}
50.0
45.0
0.8
Tj = 25°C
40.0
Tj = 125°C
0.7 _{Inductive load}
35.0
0.6
30.0
0.5
25.0
0.4
Irr
20.0
0.3
15.0
0.2
trr
10.0
0.1
5.0
0
0
0 10 20 30 40 50 60 70
COLLECTOR REVERSE CURRENT –IC (A)
SWITCHING RECOVERY LOSS CHARACTERISTICS
(TYPICAL)
4.0
VCC = 600V
3.5 ^{VD = 15V}
Tj = 25°C
3.0
Tj = 125°C
Inductive load
2.5
2.0
1.5
1.0
0.5
0
0 10 20 30 40 50 60 70
COLLECTOR REVERSE CURRENT –IC (A)
ID VS. fc CHARACTERISTICS
(TYPICAL)
60.0
VD = 15V
50.0
Tj = 25°C
Tj = 125°C
N-side
40.0
30.0
20.0
P-side
10.0
0
0
5
10 15 20 25
fc (kHz)
UV TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
20
UVt
18
UVr
16
14
12
10
8
6
4
2
0
–50
0
50
100
150
Tj (°C)
SC TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
2.0
VD = 15V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
–50
0
50
100
150
Tj (°C)
May 2009
8