M5M4V4405CJ Datasheet, PDF (9/27 Pages) Mitsubishi Electric Semiconductor – EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM

MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Hyper page Mode Cycle
(Read, Early Write, Read-Write, Read-Modify-Write Cycle, Read Write Mix Cycle, Hi-Z control by OE or W) (Note 25)
Symbol
Parameter
tHPC
tHPRWC
tRAS
tCPRH
tCPWD
tHCWD
tHAWD
tHPWD
tHCOD
tHAOD
tHPOD
Hyper page mode read/write cycle time
Hyper Page Mode read write / read modify write cycle time
RAS low pulse width for read or write cycle
RAS hold time after CAS precharge
Delay time, CAS precharge to W low
Delay time, CAS low to W low after read
Delay time, Address to W low after read
Delay time, CAS precharge to W low after read
Delay time, CAS low to OE high after read
Delay time, Address to OE high after read
Delay time, CAS precharge to OE high after read
Limits
M5M4V4405C-6,-6S M5M4V4405C-7,-7S
Unit
Min Max Min Max
(Note 26) 30
35
ns
71
84
ns
(Note 27) 82 100000 97 100000 ns
38
43
ns
(Note 24) 55
65
ns
37
47
ns
52
62
ns
55
65
ns
20
25
ns
35
40
ns
38
43
ns
Test Mode Set Cycle
Symbol
Parameter
tWSR
tWHR
Write setup time before RAS low
Write hold time after RAS low
Limits
M5M4V4405C-6,-6S M5M4V4405C-7,-7S
Min Max Min Max
10
10
10
15
Unit
ns
ns
9