CM75MXA-24S Datasheet, PDF (9/14 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM75MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, R_G=8.2 Ω, INDUCTIVE LOAD
---------------: T_j =150 °C, - - - - -: T_j =125 °C
1000
t_d(off)
t_f
100
t_d(on)
10
t_r
1
1
10
100
COLLECTOR CURRENT I_C (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, R_G=8.2 Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T_j =150 °C, - - - - -: T_j =125 °C
10
100
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, I_C=75 A, INDUCTIVE LOAD
---------------: T_j =150 °C, - - - - -: T_j =125 °C
1000
t_f
t_d(off)
100
t_d(on)
t_r
10
1
10
100
EXTERNAL GATE RESISTANCE R_G (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, I_C=75 A,
INDUCTIVE LOAD, PER PULSE
---------------: T_j =150 °C, - - - - -: T_j =125 °C
100
E_off
1
10
E_on
E_rr
0.1
1
1
10
100
COLLECTOR CURRENT I_C (A)
EMITTER CURRENT I_E (A)
Publication Date : September 2012
9
E_on
10
E_off
E_rr
1
1
10
100
EXTERNAL GATE RESISTANCE R_G (Ω)