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CM75MXA-24S Datasheet, PDF (6/14 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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< IGBT MODULES >
CM75MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr*P/Tr*N/TrBr: IGBT, Di*P/Di*N: FWDi (*=U/V/W), DiBr: ClampDi, CR*P/CR*N: ConvDi (*=R/S/T), Th: NTC thermistor
TEST CIRCUIT AND WAVEFORMS
iE
vGE
*:U, V, W
P1
90 %
G*P
-VGE
Load
*
0V
+ VCC
iC
+VGE
0V
-VGE
RG
G*N
vGE
Es
vC E
iC
N1
0A
td(o n)
tr
td (off)
Switching characteristics test circuit and waveforms
0
t
90 %
10%
tf
t
iE
IE
0A
Irr
Q rr=0.5ÃIr r Ãtr r
trr
t
0.5 ÃI r r
trr, Qrr test waveform
ICM
vCE
iC
VCC
iC
VCC
ICM
vCE
iE
IEM
0A
vEC
VCC
t
0.1ÃICM
0
0.1ÃVCC
t
0.1ÃVCC
0
0.02ÃICM t
0V
t
ti
IGBT Turn-on switching energy
ti
IGBT Turn-off switching energy
ti
FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : September 2012
6
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