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CM35MXA-24S Datasheet, PDF (9/14 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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CM35MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=18 Ω, INDUCTIVE LOAD
---------------: Tj =150 °C, - - - - -: Tj =125 °C
1000
100
td(on)
tf
td(off)
10
tr
1
1
10
100
COLLECTOR CURRENT IC (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=18 Ω,
INDUCTIVE LOAD, PER PULSE
---------------: Tj =150 °C, - - - - -: Tj =125 °C
100
10
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, IC=35 A, INDUCTIVE LOAD
---------------: Tj =150 °C, - - - - -: Tj =125 °C
1000
td(off)
tf
100
td(on)
tr
10
10
100
1000
EXTERNAL GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, IC=35 A,
INDUCTIVE LOAD, PER PULSE
---------------: Tj =150 °C, - - - - -: Tj =125 °C
100
10
1
Err
1
Eoff
0.1
Eon
0.1
1
10
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
0.01
100
Publication Date : September 2012
9
Eon
10
Eoff
Err
1
10
100
1000
EXTERNAL GATE RESISTANCE RG (Ω)
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