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CM35MXA-24S Datasheet, PDF (8/14 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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CM35MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
OUTPUT CHARACTERISTICS
(TYPICAL)
T j =25 °C
70
VGE=20 V
60
15 V
13.5 V
(Chip)
12 V
50
40
11 V
30
10 V
20
9V
10
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
T j =25 °C
10
(Chip)
8
IC=70 A
IC=35 A
6
IC=14 A
4
2
0
6
8
10
12
14
16
18
20
GATE-EMITTER VOLTAGE VGE (V)
Publication Date : September 2012
8
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
VGE=15 V
3.5
(Chip)
3
Tj =150 °C
2.5
Tj =125 °C
2
1.5
T j =25 °C
1
0.5
0
0
10
20
30
40
50
60
70
COLLECTOR CURRENT IC (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
100
(Chip)
Tj =150 °C
10
Tj =125 °C
T j =25 °C
1
0
0.5
1
1.5
2
2.5
3
EMITTER-COLLECTOR VOLTAGE VEC (V)
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