PM75B4LB060 Datasheet, PDF (8/8 Pages) Mitsubishi Electric Semiconductor – INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4LB060
FLAT-BASE TYPE
INSULATED PACKAGE
FWDi FORWARD VOLTAGE CHARACTERISTICS
(TYPICAL)
10²
7 ^{VD = 15V}
5
3
2
10¹
7
5
3
2
Tj = 25°C
Tj = 125°C
10⁰
0
0.5
1
1.5
2
2.5
EMITTER-COLLECTOR VOLTAGE VEC (V)
FWDi REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10¹
10²
7
7
5
5
3
3
2
2
10⁰
Irr
VCC = 300V 101
7
5
VD = 15V
Tj = 25°C
7
5
3
Tj = 125°C ³
2
Inductive load ²
10^–1
trr
10⁰
7
7
5
5
3
3
2
2
10^–2₁₀₀
23
5 7 10¹
23
10^–1
5 7 10²
COLLECTOR CURRENT IC (A)
FWDi REVERSE RECOVERY LOSS CHARACTERISTICS
(TYPICAL)
10¹
7 VCC = 300V
5 _{VD = 15V}
3
Tj = 25°C
2
Tj = 125°C
10^{0 Inductive load}
7
5
3
2
10^–1
7
5
3
Err
2
10^–2_{100 2 3 5 7 101 2 3 5 7 102}
COLLECTOR REVERSE CURRENT –IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT PART)
10⁰
7
5
3
2
10^–1
7
5
3
2
10^–2
7
5
3 _{Single Pulse}
2 _{Per unit base = Rth(j – c)Q = 0.32°C/ W}
10^–3_{10–52 3 5 710–42 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7101}
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART)
10⁰
7
5
3
2
10^–1
7
5
3
2
10^–2
7
5
3 _{Single Pulse}
2 _{Per unit base = Rth(j – c)F = 0.53°C/ W}
10^–3_{10–52 3 5 710–42 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7101}
TIME (s)
Jun. 2005