MH4V644AWXJ-5 Datasheet, PDF (8/20 Pages) Mitsubishi Electric Semiconductor – FAST PAGE MODE 268435456 - BIT ( 4194304 - WORD BY 64 - BIT ) DYNAMIC RAM

Preliminary Spec.
Specifications subject to
change without notice.
MITSUBISHI LSIs
MH4V644AWXJ -5, -6
FAST PAGE MODE 268435456 - BIT ( 4194304 - WORD BY 64 - BIT ) DYNAMIC RAM
Read and Refresh Cycles
Symbol
Parameter
tRC
tRAS
tCAS
tCSH
tRSH
tRCS
tRCH
tRRH
tRAL
tOCH
tORH
Read cycle time
/RAS low pulse width
/CAS low pulse width
/CAS hold time after /RAS low
/RAS hold time after /CAS low
Read Setup time after /CAS high
Read hold time after /CAS low
Read hold time after /RAS low
Column address to /RAS hold time
/CAS hold time after /OE low
/RAS hold time after /OE low
(Note 21)
(Note 21)
Note 21: Either tRCH or tRRH must be satisfied for a read cycle.
-5
Min
90
50
13
50
13
0
0
10
25
13
13
Limits
Max
Min
110
10000
60
10000
15
60
15
0
0
10
30
15
15
-6
Max
10000
10000
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle (Early Write and Delayed Write)
Symbol
Parameter
tWC
Write cycle time
Limits
-5
-6
Unit
Min
Max
Min
Max
90
110
ns
tRAS /RAS low pulse width
50
10000
60
10000
ns
tCAS
tCSH
tRSH
/CAS low pulse width
/CAS hold time after /RAS low
/RAS hold time after /CAS low
13
10000
50
13
15
10000
ns
60
ns
15
ns
tWCS Write setup time before /CAS low
(Note 23)
0
0
ns
tWCH Write hold time after /CAS low
10
10
ns
tCWL /CAS hold time after /W low
13
15
ns
tRWL /RAS hold time after W low
13
15
ns
tWP
Write pulse width
10
10
ns
tDS
Data setup time before /CAS low or W low
0
0
ns
tDH
Data hold time after /CAS low or W low
10
10
ns
tOEH /OE hold time after /W low
13
15
ns
MIT-DS-0118-0.0
MITSUBISHI
ELECTRIC
( 8 / 20 )
11/Mar./1997