M5M5V5636GP16 Datasheet, PDF (8/17 Pages) Mitsubishi Electric Semiconductor – 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM

MITSUBISHI LSIs
M5M5V5636GP –16
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
DC ELECTRICAL CHARACTERISTICS (Ta=0~70°C, VDD=3.135~3.465V, unless otherwise noted)
Symbol
Parameter
Condition
Limits
Unit
Min
Max
VDD Power Supply Voltage
3.135
3.465
V
VDDQ I/O Buffer Power Supply Voltage
VDDQ = 3.3V
VDDQ = 2.5V
3.135
2.375
3.465
V
2.625
VIH High-level Input Voltage
VDDQ = 3.135~3.465V
VDDQ = 2.375~2.625V
0.65*VDDQ VDDQ+0.3* V
VIL
Low-level Input Voltage
VDDQ = 3.135~3.465V
VDDQ = 2.375~2.625V
-0.3*
0.35*VDDQ V
VOH High-level Output Voltage
IOH = -2.0mA
VDDQ-0.4
V
VOL Low-level Output Voltage
IOL = 2.0mA
0.4
V
Input Current except ZZ and LBO# VI = 0V ~ VDDQ
10
ILI
Input Current of LBO#
VI = 0V ~ VDDQ
10
µA
Input Current of ZZ
VI = 0V ~ VDDQ
10
ILO
Off-state Output Current
VI (G#) ≥ VIH, VO = 0V ~ VDDQ
10
µA
ICC1
Power Supply Current : Operating
Device selected;
Output Open
VI≤VIL or VI≥VIH
ZZ≤VIL
6.0ns cycle(167MHz)
340
mA
ICC2
Power Supply Current : Deselected
Device
deselected
VI≤VIL or VI≥VIH
ZZ≤VIL
6.0ns cycle(167MHz)
ICC3
CMOS Standby Current
(CLK stopped standby mode)
Device deselected; Output Open
VI≤VSS+0.2V or VI≥VDDQ-0.2V
CLK frequency=0Hz, All inputs static
ICC4 Snooze Mode Standby Current
Snooze mode
ZZ≥VDDQ-0.2V, LBO#≥VDD-0.2V
Device selected;
Output Open
ICC5 Stall Current
CKE#≥VIH
6.0ns cycle(167MHz)
VI≤VSS+0.2V or
VI≥VDDQ-0.2V
Note17.*VILmin is –1.0V and VIH max is VDDQ+1.0V in case of AC(Pulse width≤2ns).
Note18."Device Deselected" means device is in power-down mode as defined in the truth table.
90
mA
20
mA
20
mA
45
mA
8
MITSUBISHI
Advanced Information
ELECTRIC
M5M5V5636GP REV.0.1