M5M5V416BUG-70HI Datasheet, PDF (8/10 Pages) Mitsubishi Electric Semiconductor – 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

revision-01, 17th July '00
M5M5V416BUG - 70H I
MITSUBISHI LSIs
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Vcc (PD) Power down supply voltage
VI (BC) Byte control input BC1 & BC2
VI (S1)
Chip select input S1
VI (S2)
Chip select input S2
Icc (PD)
Power down
supply c urrent
Test conditions
Vcc=3.0V
1)
BSC1 1<=0a.n2dVBoCr 2S>=2
Vcc-0.2V
>= _Vcc-0.2V
other inputs=0~3V
2)
S1 ^>=Vcc - 0.2V
other inputs=0~3V
3)
S2 0.2V
other inputs=0~3V
(2) TIMING REQUIREMENTS
+85°C
+70°C
+40°C
0 ~ +25°C
-20 ~ +25°C
-40 ~ +25°C
Limits
Min Ty p Max
2.0
2.0
2.0
0.2
-
- ₃₀
Units
V
V
V
V
µA
-
- ₁₅ µA
-
1
3
µA
- 0.3 1 µA
- 0.3 1 µA
- _0.3 1 µA
Typical value is for Ta=25°C
Symbol
Parameter
tsu (PD)
trec (PD)
Power down set up time
Power down recov ery t ime
(3) TIMING DIAGRAM
BC control mode
Vcc
Test conditions
Limits
Min Ty p Max
0
5
Units
ns
ms
tsu (PD)
2.7V
2.7V
trec (PD)
BC1
2.2V
BC2
BC1 , BC2 ^>= Vcc - 0.2V
2.2V
S1 control mode
Vcc
Note 7: On the S1 mode , the lev el of S2 must be f ixed at S2 ^>= Vcc - 0.2V or S2 0.2V.
tsu (PD)
2.7V
2.7V
trec (PD)
S1
S2 control mode
Vcc
2.2V
S1 ^>= Vcc - 0.2V
2.2V
S2
2.7V
tsu (PD)
2.7V
trec (PD)
0.2V
S2 0.2V
0.2V
MITSUBISHI ELECTRIC
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