M5M5V416BUG-70HI Datasheet, PDF (1/10 Pages) Mitsubishi Electric Semiconductor – 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

revision-01, 17th July '00
M5M5V416BUG - 70H I
MITSUBISHI LSIs
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5V416B is a f amily of low v oltage 4-Mbit static RAMs
organized as 262,144-words by 16-bit, f abricated by Mitsubishi's
high-perf ormance 0.25µm CMOS technology .
The M5M5V416B is suitable f or memory applications where a
simple interf acing , battery operating and battery backup are the
important design objectiv es.
M5M5V416BUG is packaged in a CSP (chip scale package),
with the outline of 7mm x 8.5mm, ball matrix of 6 x 8 (48pin) and
ball pitch of 0.75mm. It giv es the best solution f or a compaction
of mounting area as well as f lexibility of wiring pattern of printed
circuit boards.
Those are summarized in the part name table below.
FEATURES
Single +2.7~+3.6V power supply
Small stand-by current: 0.3µA(3V,ty p.)
No clocks, No ref resh
Data retention supply v oltage =2.0V to 3.6V
All inputs and outputs are TTL compatible.
Easy memory expansion by S1, S2, BC1 and BC2
Common Data I/O
Three-state outputs: OR-tie capability
OE prev ents data contention in the I/O bus
Process technology : 0.25µm CMOS
Package: 48pin 7mm x 8.5mm CSP
Version,
Operating
temperature
Part name
I-v ersion
-40 ~ +85°C ^{M5M5V416BUG -70HI}
Power
Supply
2.7 ~ 3.6V
Access time
max.
Stand-by c urrent Icc(PD), Vcc=3.0V
Activ e
ty pical *
Ratings (max.)
current
Icc1
25°C 40°C 25°C 40°C 70°C 85°C (3.0V, ty p.)
70ns
0.3µA 1µA
1µA 3µA 15µA 30µA
50mA
(10MHz)
7mA
(1MHz)
* "ty pical" parameter is sampled, not 100% tested.
PIN CONFIGURATION (TOP VIEW)
1 23 4 56
A BC1 OE
A0
A1
A2
S2
B ^DQ9 BC2 ^A3
A4 S1 DQ1
C DQ10 ^{DQ11 A5}
A6 DQ2 DQ3
D ^{GND DQ12 A17 A7 DQ4 VCC}
E ^{VCC DQ13 GND A16 DQ5 GND}
F ^{DQ15 DQ14 A14 A15 DQ6 DQ7}
G ^{DQ16 N.C. A12 A13}
W
DQ8
H ^N.C.
A8
A9
A10 A11 N.C.
Outline: 48FJA
NC: No Connection
Pin
Function
A0 ~ A17 Address input
DQ1 ~ DQ16 Data input / output
S1
Chip select input 1
S2
Chip select input 2
W
Write control input
OE
BC1
BC2
Vcc
Output enable input
Lower By te (DQ1 ~ 8)
Upper By te (DQ9 ~ 16)
Power supply
GND Ground supply
MITSUBISHI ELECTRIC
1