M5M5V416BTP Datasheet, PDF (8/11 Pages) Mitsubishi Electric Semiconductor – 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

revision-P04, ' 98.12.16
MITSUBISHI LSIs
M5M5V416BTP,RT
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Vcc (PD) Power down supply voltage
VI (BC) Byte control input BC1 & BC2
VI (S1)
Chip select input S1
VI (S2)
Chip select input S2
Vcc=3.0V
-LW, -LI
Icc (PD)
Power down
supply c urrent
1)
BSC1 1<=0a.n2dVBoCr 2S>=2
Vcc-0.2V
>= _Vcc-0.2V
other inputs=0~3V
-L, -LW, -LI
-HW, -HI
2)
S1 ^>=Vcc - 0.2V
other inputs=0~3V
-H, -HW, -HI
3)
S2 0.2V
other inputs=0~3V
-H
-HW
-HI
+70 ~ +85°C
+70°C
+70 ~ +85°C
+40 ~ +70°C
+25 ~ +40°C
0 ~ +25°C
-20 ~ +25°C
-40 ~ +25°C
(2) TIMING REQUIREMENTS
Limits
Min Ty p Max ^Units
2.0
V
2.0
V
2.0
V
0.2
V
-
- 40 µA
-
- 20 µA
-
- 20 ^µA
-
- ₁₀ µA
-
1
3 µA
- 0.3 1 µA
- 0.3 1 µA
- 0.3 1 µA
Typical value is for Ta=25°C
Symbol
Parameter
tsu (PD)
trec (PD)
Power down set up time
Power down recov ery t ime
(3) TIMING DIAGRAM
BC control mode
Vcc
Test conditions
Limits
Min Ty p Max
0
5
Units
ns
ms
tsu (PD)
2.7V
2.7V
trec (PD)
BC1
2.2V
BC2
S1 control mode
Vcc
tsu (PD)
BC1 , BC2 ^>= Vcc - 0.2V
2.7V
2.7V
2.2V
trec (PD)
S1
S2 control mode
Vcc
2.2V
S2
0.2V
S1 ^>= Vcc - 0.2V
tsu (PD)
2.7V
S2 0.2V
2.7V
2.2V
trec (PD)
0.2V
MITSUBISHI ELECTRIC
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