M5M5V416BTP Datasheet, PDF (1/11 Pages) Mitsubishi Electric Semiconductor – 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

revision-P04, ' 98.12.16
MITSUBISHI LSIs
M5M5V416BTP,RT
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
DESCRIPTION
FEATURES
The M5M5V416B is a f amily of low v oltage 4-Mbit static RAMs
organized as 262,144-words by 16-bit, f abricated by Mitsubishi's
high-perf ormance 0.25µm CMOS technology .
The M5M5V416B is suitable f or memory applications where a
simple interf acing , battery operating and battery backup are the
important design objectiv es.
M5M5V416BTP,RT are packaged in a 44-pin 400mil thin small
outline package. M5M5V416BTP (normal lead bend ty pe package)
, M5M5V416BRT (rev erse lead bend ty pe package) , both ty pes
are v ery easy t o design a printed circuit board.
From the point of operating temperature, the f amily is div ided into
three v ersions; "Standard", "W-v ersion", and "I-v ersion". Those are
summarized in the part name table below.
Version,
Operating
Part name
temperature
M5M5V416BTP , RT -70L
M5M5V416BTP , RT -85L
Standard M5M5V416BTP , RT -10L
0 ~ +70°C ^{M5M5V416BTP , RT -70H}
M5M5V416BTP , RT -85H
M5M5V416BTP , RT -10H
M5M5V416BTP , RT -70LW
M5M5V416BTP , RT -85LW
W-v ersion ^{M5M5V416BTP , RT -10LW}
-20 ~ +85°C ^{M5M5V416BTP , RT -70HW}
M5M5V416BTP , RT -85HW
M5M5V416BTP , RT -10HW
M5M5V416BTP , RT -70LI
M5M5V416BTP , RT -85LI
I-v ersion M5M5V416BTP , RT -10LI
-40 ~ +85°C ^{M5M5V416BTP , RT -70HI}
M5M5V416BTP , RT -85HI
M5M5V416BTP , RT -10HI
PIN CONFIGURATION
Power
Supply
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
Access time
max.
70ns
85ns
100ns
70ns
85ns
100ns
70ns
85ns
100ns
70ns
85ns
100ns
70ns
85ns
100ns
70ns
85ns
100ns
Single +2.7~+3.6V power supply
Small stand-by current: 0.3µA(3V,ty p.)
No clocks, No ref resh
Data retention supply v oltage=2.0V to 3.6V
All inputs and outputs are TTL compatible.
Easy memory expansion by S1, S2, BC1 and BC2
Common Data I/O
Three-state outputs: OR-tie capability
OE prev ents data contention in the I/O bus
Process technology : 0.25µm CMOS
Package: 44 pin 400mil TSOP (II)
Stand-by c urrent Icc(PD), Vcc=3.0V
Activ e
ty pical *
Ratings (max.)
current
Icc1
25°C 40°C 25°C 40°C 70°C 85°C _{(3.0V, ty p.)}
--- --- --- --- 20µA ---
0.3µA 1µA 1µA 3µA 10µA ---
--- ---
0.3µA 1µA
--- ---
--- --- 20µA 40µA
1µA 3µA 10µA 20µA
--- --- 20µA 40µA
40mA
(10MHz)
5mA
(1MHz)
0.3µA 1µA 1µA 3µA 10µA 20µA
* "ty pical" parameter is sampled, not 100% tested.
A4 1
A3 2
A2 3
A1 4
A0 5
S1 6
DQ1 7
DQ2 8
DQ3 9
DQ4 10
Vcc 11
GND 12
DQ5 13
DQ6 14
DQ7 15
DQ8 16
WE 17
A15 18
A14 19
A13 20
A12 21
A16 22
44P3W-H
44
A5
A5 44
43
A6
A6 43
42
A7
A7 42
41 OE
OE
41
40
BC2
BC2 40
39
BC1
BC1 39
38
DQ16
DQ16
38
37
DQ15
DQ15
37
36
DQ14
DQ14
36
35
DQ13
DQ13
35
34 GND
GND
34
33
Vcc
Vcc
33
32
DQ12
DQ12
32
31
DQ11
DQ11
31
30
DQ10
DQ10
30
29 DQ9
DQ9
29
28
S2
S2
28
27
A8
A8
27
26
A9
A9
26
25
A10
A10 25
24
A11
A11 24
23
A17
A17 23
1
A4
2
A3
3
A2
4
A1
Pin
Function
5
A0
6
S1
A0 ~ A17 Address input
7 DQ1 _{DQ1 ~ DQ16 Data input / output}
8
DQ2
9
DQ3
S1
Chip select input 1
10
DQ4
11
Vcc
S2
Chip select input 2
12
GND
13
DQ5
14
DQ6
W
Write control input
OE
Output enable input
15
DQ7
16
DQ8
BC1
Lower By te (DQ1 ~ 8)
17
WE
18
A15
19
A14
BC2
Vcc
Upper By te (DQ9 ~ 16)
Power supply
20
A13
21
A12
GND
Ground supply
22
A16
Outline: 44P3W-H/J
44P3W-J
NC: No Connection
MITSUBISHI ELECTRIC
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