M5M29FB800FP Datasheet, PDF (7/14 Pages) Mitsubishi Electric Semiconductor – 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
AC ELECTRICAL CHARACTERISTICS (Ta = 0 ~70°C, Vcc = 3.3±0.3V)
Read-Only Mode
Symbol
Parameter
tRC
ta (AD)
ta (CE)
ta (OE)
tCLZ
tDF(CE)
tOLZ
tDF(OE)
tPHZ
tAVAV
tAVQV
tELQV
tGLQV
tELQX
tEHQZ
tGLQX
tGHQZ
tPLQZ
Read cycle time
Address access time
Chip enable access time
Output enable access time
Chip enable to output in low-Z
Chip enable high to output in high Z
Output enable to output in low-Z
Output enable high to output in high Z
/RP low to output high-Z
ta(BYTE) tFL/HQV /BYTE access time
tBHZ
tOH
tBCD
tBAD
tOEH
tFLQZ
tOH
tELFL/H
tAVFL/H
tWHGL
/BYTE low to output high-Z
Output hold from /CE, /OE, addresses
/CE low to /BYTE high or low
Address to /BYTE high or low
/OE hold from /WE high
tPS tPHEL /RP recovery to /CE low
M5M29FB/T800-80
Min Typ Max
80
80
80
40
0
25
0
25
150
80
25
0
5
5
80
500
Timing measurements are made under AC waveforms for read operations.
Limits
M5M29FB/T800-10
Min Typ Max
100
100
100
50
0
25
0
25
150
100
25
0
5
5
100
500
M5M29FB/T800-12 Unit
Min Typ Max
120
ns
120 ns
120 ns
60 ns
0
ns
30 ns
0
ns
30 ns
300 ns
120 ns
30 ns
0
ns
5 ns
5 ns
120
ns
500
ns
AC ELECTRICAL CHARACTERISTICS (Ta = 0 ~ 70°C, Vcc = 3.3V±0.3V)
Write Mode (/WE control)
Symbol
Parameter
M5M29FB/T800-80
Limits
M5M29FB/T800-10
M5M29FB/T800-12 ^Unit
Min Typ Max Min Typ Max Min Typ Max
tWC tAVAV Write cycle time
80
100
120
ns
tAS tAVWH Address set-up time
50
50
50
ns
tAH tWHAX Address hold time
10
10
10
ns
tDS tDVWH Data set-up time
50
50
50
ns
tDH tWHDX Data hold time
10
10
10
ns
tCS tELWL Chip enable set-up time
0
0
0
ns
tCH tWHEH Chip enable hold time
0
0
0
ns
tWP tWLWH Write pulse width
60
60
60
ns
tWPH tWHWL Write pulse width high
20
20
20
ns
tBS tFL/HWH Byte enable high or low set-up time
50
50
50
ns
tBH tWHFL/H Byte enable high or low hold time
80
100
120
ns
tBLS _{tPHHWH Block Lock set-up to write enable high 80}
tWPS
100
120
ns
tBLH _{tQVPH Block Lockhold from valid SRD}
0
tWPH
0
0
ns
tDAP tWHRH1 Duration of auto-program operation
7.5 120
7.5 120
7.5 120 ms
tDAE tWHRH2 Duration of auto-block erase operation
50 600
50 600
50 600 ms
tWHRL tWHRL Write enable high to RY/BY low
80
100
120 ns
tPS tPHWL /RP high recovery to write enable low 500
500
500
ns
Read timing parameters during command write operations mode are the same as during read-only operations mode.
Typical values at Vcc=3.3V, Ta=25°C
7
May 1997 , Rev.6.1