M5M29FB800FP Datasheet, PDF (1/14 Pages) Mitsubishi Electric Semiconductor – 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

MITMSIUTSBUISBHISI HLISILsSIs
M5M29FBM/T58M0290FFBP/T,8V00PF,PR,VVP-,8R0V-,8-01,0-1,0-,1-122
8,388,388,680,680-B8-IBT ^{I(T10(14084,587,567-W6-OWRODRDBYB8Y-B8-IBT I/T5/2542,248,288-W8-OWRODRDBYB1Y61-B6-IBT)IT)}
CMCOMSO3S.33V.3-OVN-OLNYL, ^YB, LBOLCOKCEKREARSAESFELFALSAHSMHEMMEOMROYRY
DESCRIPTION
The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for
mobile and personal computing, and communication products. The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for
the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 44pin SOP or 48pin
TSOP(I).
FEATURES
Organization
................................. _{524,288 word x 16bit}
................................. _{1,048,576 word x 8 bit}
Supply voltage ............................................................. VCC = 3.3V±0.3V
Access time
.............................. _{80/100/120ns (Max)}
PIN CONFIGURATION (TOP VIEW)
Power Dissipation
Read
....................... _{108 mW (Max.)}
Program/Erase
....................... _{144 mW (Max.)}
Standby
....................... _{0.72 mW (Max.)}
Deep power down mode ^{.......................} 3.3µW (typ.)
Auto program
Program Time
....................... _{7.5ms (typ.)}
Program Unit ^{.................................} 128word
Auto Erase
Erase time
................................. _{50 ms (typ.)}
Erase Unit
Boot Block ^{.................................} 8Kword / 16Kbyte x 1
Parameter Block ^{........................} 4Kword / 8Kbyte x 2
Main Block
......................._{16Kword / 32Kbyte x 1}
........................... _{32Kword / 64Kbyte x 15}
Program/Erase cycles ^{.......................................} 100Kcycles
NC
1
A18
2
A17
3
A7
4
A6
5
ADDRESS
A5
6
INPUTS
A4
7
A3
8
A2
9
A1
10
A0
11
CHIP ENABLE
INPUT
/CE
12
GND 13
OUTPUT ENABLE
INPUT
/OE
14
DQ0
15
RESET/
44
/RP
POWER DOWN
INPUT
43
/WE ^{WRITE ENABLE}
INPUT
42
A8
41
A9
40
A10
39
A11
ADDRESS
38
A12
INPUTS
37
A13
36
A14
35
A15
34
A16
33
/BYTE
BYTE ENABLE
INPUT
32
GND
31 DQ15/A-1
30
DQ7
Boot Block
M5M29FB800
M5M29FT800
Other Functions
........................... _{Bottom Boot}
........................... _{Top Boot}
DATA
INPUTS/
OUTPUTS
DQ8
16
DQ1
17
DQ9
18
DQ2 19
29
DQ14
28
DQ6
27
DQ13
26
DQ5
DATA
INPUTS/
OUTPUTS
Software Command Control
DQ10 20
25
DQ12
Selective Block Lock
Erase Suspend/Resume
Program Suspend/Resume
DQ3
21
DQ11 22
24
DQ4
23
VCC
Status Register Read
Sleep
Package
Outline 600mil 44-pin SOP
(FP: 44P2A-A)
48-Lead, 12mmx 20mm TSOP (type-I)
44-Lead SOP
APPLICATION
Code Storage PC BIOS
Digital Cellular Phone/Telecommunication
A15
1
A14
2
A13
3
A12
4
A11
5
A10
6
A9
7
A8
8
NC
9
NC
10
/WE 11
/RP 12
NC
13
/WP 14
RY/BY 15
A18
16
A17
17
A7
18
A6
19
A5
20
A4
21
A3
22
A2
23
A1
24
M5M29FB/T800VP
48
A16
47 /BYTE
A16
1
/BYTE 2
46 GND
GND
3
45 DQ15/A-1 DQ15/A-1
4
44 DQ7
43
DQ14
DQ7
5
DQ14
6
42 DQ6
DQ6
7
41
DQ13
40 DQ5
DQ13
8
DQ5
9
39
DQ12
DQ12
10
38
DQ4
37
VCC
36
DQ11
35
DQ3
DQ4
11
VCC
12
DQ11
13
DQ3
14
34
DQ10
33
DQ2
DQ10
15
DQ2
16
32
DQ9
31
DQ1
30
DQ8
DQ9
17
DQ1
18
DQ8
19
29
DQ0
28 /OE
DQ0
20
/OE
21
27 _GND
26 /CE
GND
22
/CE
23
25
A0
A0
24
M5M29FB/T800RV
48
A15
47
A14
46
A13
45
A12
44
A11
43
A10
42
A9
41
A8
40
NC
39
NC
38 /WE
37 /RP
36
NC
35 /WP
34 RY/BY
33
A18
32
A17
31
A7
30
A6
29
A5
28
A4
27
A3
26
A2
25
A1
Outline 48pin TSOP type-I (12 X 20mm)
VP(Normal bend): 48P3R-B
RV(Reverse bend): 48P3R-C
NC : NO CONNECTION
This product is compatible with HN29WB/T800 by Hitachi Ltd.
1
May 1997 , Rev.6.1