English
Language : 

GCU15CA-130_09 Datasheet, PDF (7/7 Pages) Mitsubishi Electric Semiconductor – GCT (Gate Commutated Turn-off) THYRISTOR UNIT HIGH POWER INVERTER USE PRESS PACK TYPE
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU15CA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
104
7
5
3
2
Tj=25°C
103
Tj=125°C
7
5
3
2
102
7
5
3
2
10
0 1 2 3 4 5 6 7 8 9 10
ON-STATE VOLTAGE VTM (V)
Eon VS IT (Max)
2.5
CONDITION
VD=3000V, Tj=125°C
2.0 di/dt=1000A/µs
Cs=0.2µF, Rs=5Ω
1.5
1.0
0.5
0.0
0 200 400 600 800 1000 1200 1400 1600 1800
TURN ON CURRENT IT (A)
Eoff VS IT (Max)
14
CONDITION
12 VD=3000V, VDM=VD+1.25×IT
Tj=125°C, Cs=0.2µF
Rs=5Ω
10
8
6
4
2
0
0 200 400 600 800 1000 1200 1400 1600 1800
TURN OFF CURRENT IT (A)
0.020
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
TIME (S)
7
Erec VS IT (Max)
16
CONDITION
14 VR=3000V, Tj=125°C
di/dt=1000A/µs
12 Cs=0.2µF, Rs=5Ω
10
8
6
4
2
0
0 200 400 600 800 1000 1200 1400 1600 1800
ON-STATE CURRENT IT (A)
Mar. 2009