GCU15CA-130_09 Datasheet, PDF (2/7 Pages) Mitsubishi Electric Semiconductor – GCT (Gate Commutated Turn-off) THYRISTOR UNIT HIGH POWER INVERTER USE PRESS PACK TYPE

MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU15CA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
GCT PART
MAXIMUM RATINGS
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
VRSM
VDRM
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
VDSM
V(LTDS)
Non-repetitive peak off-state voltage
Long term DC stability voltage
Conditions
—
—
Gate driver energized
Gate driver energized
Gate driver energized, λ = 100 Fit
Symbol
IT(RMS)
IT(AV)
ITQRM
ITSM
I^2t
diT/dt
diR/dt
PFGM
PRGM
PFG(AV)
PRG(AV)
VFGM
VRGM
IFGM
IRGM
Parameter
RMS on-state current
Average on-state current
Repetitive controllable
on-state current
Surge on-state current
Current-squared, time integration
Critical rate of rise of on-state
current
Critical rate of rise of reverse
recovery current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak reverse gate current
Conditions
Applied for all condition angles
f = 60Hz, sinewave θ = 180°, Tf = 66°C
VDM = 3/4 VDRM, VD = 3000V, LC = 0.3µH
Tj = 25/125°C
(See Fig. 1, 3)
One half cycle at 60Hz, Tj = 125°C start
VD = 3000V, IT = 1500A, CS = 0.2µF, RS = 5Ω
Tj = 25/125°C, f = 60Hz
(See Fig. 1, 2)
IT = 1500A, VR = 3000V, Tj = 25/125°C
CS = 0.2µF, RS = 5Ω
(See Fig. 4, 5)
Voltage class
6500
6500
6500
6500
3600
Ratings
780
500
1500
8
2.7 × 10⁵
1000
1000
9
32
180
230
10
21
900
1500
Unit
V
V
V
V
V
Unit
A
A
A
kA
A²s
A/µs
A/µs
kW
kW
W
W
V
V
A
A
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
VTM
IRRM
IDRM
IGRM
dv/dt
tgt
td
Eon
ts
Eoff
QRR
Erec
IGT
VGT
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state
voltage
Turn-on time
Turn-on delay time
Turn-on switching energy
Storage time
Turn-off switching energy
Reverse recovery charge
Reverse recovery energy
Gate trigger current
Gate trigger voltage
IT = 800A, Tj = 125°C
VRM = 6500V, Tj = 125°C
VDM = 6500V, Tj = 125°C, Gata driver energized
VRG = 21V, Tj = 125°C
VD = 3000V, Tj = 125°C
Gate driver energized
(Expo. wave)
IT = 1500A, VD = 3000V, di/dt = 1000A/µs, Tj = 125°C
CS = 0.2µF, RS = 5Ω
(See Fig. 1, 2)
IT = 800A, VD = 3000V, di/dt = 1000A/µs
CS = 0.2µF, RS = 5Ω, Tj = 125°C
(See Fig. 1, 2)
IT = 1500A, VDM = 3/4 VDRM, VD = 3000V
CS = 0.2µF, RS = 5Ω, Tj = 125°C
(See Fig. 1, 5)
IT = 800A, VDM = 4000V, VD = 3000V
CS = 0.2µF, RS = 5Ω, Tj = 125°C
(See Fig. 1, 5)
VR = 3000V, IT = 800A, di/dt = 1000A/µs
CS = 0.2µF, RS = 5Ω, Tj = 125°C
(See Fig. 4, 5)
VD = 24V, RL = 0.1Ω, Tj = 25°C
DC method
Min
—
—
—
—
3000
—
—
—
—
—
—
—
—
—
Limits
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
Max
6
V
300 mA
150 mA
100 mA
— V/µs
5
µs
1
µs
1.3 J/P
3
µs
5.2 J/P
2000 µC
7.4 J/P
0.75
A
1.5
V
Mar. 2009
2