CM75DY-34A_11 Datasheet, PDF (7/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM75DY-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T_j =25 °C
100
C_ies
10
1
C_oes
C_res
0.1
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
V_CC=1000 V, V_GE=±15 V, R_G=6.4 Ω,
T_j =25 °C, INDUCTIVE LOAD
1000
t_rr
100
I_rr
0.01
0.1
1
10
100
COLLECTOR-EMITTER VOLTAGE V_CE (V)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
I_C=75 A, T _j =25 °C
20
V_CC=1000 V
15
V_CC=800 V
10
5
10
1
10
100
EMITTER CURRENT I_E (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
Single pulse, T_C=25°C
R_th(j-c)Q=0.16 K/W, R_th(j-c)D=0.29 K/W
1
0.1
0.01
0
0
100
200
300
400
500
600
700
GATE CHARGE Q_G (nC)
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
TIME (S)
Publication Date : June.2011
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