CM75DY-34A_11 Datasheet, PDF (4/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM75DY-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
VGE=15 V
G1
V
Es1
Short-
circuited
G2
Es2
C1
I_C
C2E1
E2
Short-
circuited
G1
Es1
VGE=15 V
G2
Es2
C1
V
C2E1
I_C
E2
Short-
circuited
G1
V
Es1
Short-
circuited
G2
Es2
C1
I_E
C2E1
E2
Short-
circuited
G1
Es1
Short-
circuited
G2
Es2
C1
V
C2E1
I_E
E2
Tr1
Tr2
Di1
Di2
VCEsat test circuit
i_E
-V _GE
Load
v_GE
0V
90 %
0
VEC test circuit
i_E
Q _rr=0.5×I _rr×t_rr
t
I_E
t _rr
+ V_CC
i_C
0A
t
90 %
+V _GE
0V
-V _GE
R_G
VCE
V_GE
iC
0A
t_{d (o n)}
t_r
t _{d( o ff)}
Switching characteristics test circuit and waveforms
10%
t_f
t
Irr
0.5×I r r
trr, Qrr test waveform
I_CM
v_CE
i_C
V_CC
i_C
V_CC
I_CM
v_CE
i_E
I_EM
0A
v_EC
V_CC
t
0.1×I_CM
0
0.1×V_CC
t
0.1×V_CC
0
0.02×I_{CM t}
0V
t
t_i
IGBT Turn-on switching energy
t_i
IGBT Turn-off switching energy
t_i
FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : June.2011
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