RD07MUS2B_11 Datasheet, PDF (6/18 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

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RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W
TYPICAL CHARACTERISTICS ( 763-870MHz )
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
f-Po CHARACTERISTICS @f=763-870MHz
50
100
Po
40
80
f-Po CHARACTERISTICS @f=763-870MHz
10
100
Ta=+25°C
Po
Vdd=7.2V
8
Pin=0.5W
80
Idq=250mA
30
60
6
60
Ta=+25°C
ηd
Vdd=7.2V
η_ｄ
20
Pin=0.5W
40
4
40
Idq=250mA
Gp
Idd
10
20
2
20
Idd
0
0
760 780 800 820 840 860 880 900 920 940 960
f (MHz)
Pin-Po CHARACTERISTICS @f=870MHz
50
100
0
0
760 780 800 820 840 860 880 900 920 940 960
f (MHz)
Pin-Po CHARACTERISTICS @f=870MHz
10
100
Ta=+25°C
f =870MHz
40
Vdd=7.2V
Idq=250mA
30
20
10
Po
80
8
60
6
η_ｄ
40
4
Gp
20
2
Idd
80
Po
60
ηd _Ta=+25°C
f=870MHz ₄₀
Vdd=7.2V
Idd ^Idq=250mA
20
0
0
0 5 10 15 20 25 30
Pin(dBm)
0
0
0.0
0.2
0.4
0.6
0.8
Pin(W)
Vdd-Po CHARACTERISTICS @f=870MHz
25
5
Ta=+25°C
f =870MHz
20
Pin=0.5W
4
Idq=250mA
Zg=ZI=50 ohm
15
3
10
Idd
2
5
Po
1
0
0
3 4 5 6 7 8 9 10
Vdd(V)
Publication Date : Oct．2011
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