RD07MUS2B_11 Datasheet, PDF (1/18 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

< Silicon RF Power MOS FET (Discrete) >
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W
DESCRIPTION
RD07MUS2B is a MOS FET type transistor
specifically designed for VHF/UHF/870MHz
RF power amplifiers applications.
FEATURES
High power gain and High Efficiency.
Typical Po Gp ηD
(175MHz) 7.2W 13.8dB 65%
(527MHz) 8W 13.0dB 63%
(870MHz) 7W 11.5dB 58%
Integrated gate protection diode.
APPLICATION
For output stage of high power amplifiers in
VHF/UHF/800MHz-band mobile radio sets.
OUTLINE DRAWING
6.0+/-0.15
INDEX MARK
(Gate)
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
3
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
(0.25)
RoHS COMPLIANT
RD07MUS2B is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
RATINGS
VDSS Drain to source voltage
Vgs=0V
25
VGSS Gate to source voltage
Vds=0V
-5/+10
Pch
Channel dissipation
Tc=25°C
50
Pin
Input Power
Zg=Zl=50
0.8*
ID
Drain Current
-
3
Tch
Junction Temperature
-
150
Tstg
Storage temperature
-
-40 to +125
Rth j-c Thermal resistance
Junction to case
2.5
Note: Above parameters are guaranteed independently.
*: 175MHz spec. is 0.6W
UNIT
V
V
W
W
A
°C
°C
°C/W
Publication Date : Oct．2011
1