RD06HHF1_08 Datasheet, PDF (6/8 Pages) Mitsubishi Electric Semiconductor – RF POWER MOS FET Silicon MOSFET Power Transistor 30MHz,6W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD06HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
Zo=50Њ
f=30MHz Zout
f=30MHz Zin
Zin , Zout
f
(MHz)
30
Zin
(ohm)
65.06-j150.9
Zout
(ohm)
8.75-j4.92
Conditions
Po=10W,
Vdd=12.5V,Pin=0.15W
RD06HHF1
MITSUBISHI ELECTRIC
6/8
7 Mar 2008