RD06HHF1_08 Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – RF POWER MOS FET Silicon MOSFET Power Transistor 30MHz,6W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD06HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W
DESCRIPTION
RD06HHF1 is a MOS FET type transistor specifically
designed for HF RF power amplifiers applications.
FEATURES
High power gain:
Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
OUTLINE DRAWING
9.1+/-0.7
3.6+/-0.2
2
1.2+/-0.4
1.3+/-0.4
APPLICATION
For output stage of high power amplifiers in
HF band mobile radio sets.
0.8+0.10/-0.15
123
2.5 2.5
0.5+0.10/-0.15
5deg
RoHS COMPLIANT
RD06HHF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the lot
marking.
PINS
1:GATE
9.5MAX
2:SOURCE
note:
3:DRAIN
Torelance of no designation means typical value.
Dimension in mm.
This product include the lead in high melting temperaturetype solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)






























RD06HHF1
MITSUBISHI ELECTRIC
1/8
7 Mar 2008