RD02MUS1_10 Datasheet, PDF (6/10 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TEST CIRCUIT(f=175MHz)
Vgg
Vdd
C1
C2 ^10uF,50V
19mm
15mm
4 .7 kO HM
R F -I N
3mm 33mm ^6.5mm 12mm
5mm _62pF
L1
39pF
68OHM
240pF
RRDD0022MMUVSS11 _{10pF L3}
175MHz
3mm
5mm
3mm 11.5mm
10pF
13.5mm 12mm ^5mm _RF-OUT
L2
62pF
43pF
L1: Enameled wire 5Turns,D:0.43mm,2.46mmO.D
L2: Enameled wire 3Turns,D:0.43mm,2.46mmO.D
L3: Enameled wire 9Turns,D:0.43mm,2.46mmO.D
C1,C2:1000pF,0.0022uF in parallel
Note:Board material-Teflon substrate
Micro strip line width=2.2mm/50OHM,er:2.7,t=0.8mm
TEST CIRCUIT(f=520MHz)
Vgg
Vdd
C1
19mm
19mm
1 0 uF ,5 0 V
C2
R F -I N
4 .7 kO HM
26.5mm 20mm ^2mm 10mm
62pF
68OHM
6pF 43pF
240pF
RD02MUS1
520MHz
3mm
L1
4 .5 m m
11mm
4 0 .5 m m
62pF
18pF
R F -O UT
L1: Enameled wire 9Turns,D:0.43mm,2.46mmO.D
C1,C2:1000pF,0.022uF in parallel
Note:Board material-Teflon substrate
Micro strip line width=2.2mm/50OHM,er:2.7,t=0.8m m
RD02MUS1
6/10
17 Aug 2010