RD02MUS1_10 Datasheet, PDF (1/10 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
DESCRIPTION
OUTLINE DRAWING
RD02MUS1 is a MOS FET type transistor
specifically designed for VHF/UHF RF power
6.0+/-0.15
amplifiers applications.
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
FEATURES
High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz, 520MHz
High Efficiency: 65%typ. (175MHz)
High Efficiency: 65%typ. (520MHz)
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.






RoHS COMPLIANT
INDEX MARK
(Gate)
2
3
(0.25)
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RD02MUS1-101,T112
is a RoHS compliant products.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
How ever, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
RD02MUS1
1/10
17 Aug 2010