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PSS10S92F6-AG Datasheet, PDF (6/12 Pages) Mitsubishi Electric Semiconductor – Dual-In-Line Package Intelligent Power Module
< Dual-In-Line Package Intelligent Power Module >
PSS10S92F6-AG, PSS10S92E6-AG
TRANSFER MOLDING TYPE
INSULATED TYPE
Fig. 5 Timing Charts of The DIPIPM Protective Functions
[A] Short-Circuit Protection (N-side only with the external shunt resistor and RC filter)
a1. Normal operation: IGBT ON and outputs current.
a2. Short circuit current detection (SC trigger)
(It is recommended to set RC time constant 1.5~2.0μs so that IGBT shut down within 2.0μs when SC.)
a3. All N-side IGBT's gates are hard interrupted.
a4. All N-side IGBTs turn OFF.
a5. FO outputs for tFo=minimum 20μs.
a6. Input = “L”: IGBT OFF
a7. Fo finishes output, but IGBTs don't turn on until inputting next ON signal (LH).
(IGBT of each phase can return to normal state by inputting ON signal to each phase.)
a8. Normal operation: IGBT ON and outputs current.
Lower-side control
input
Protection circuit state
Internal IGBT gate
Output current Ic
Sense voltage of
the shunt resistor
Error output Fo
a6
SET
a3
a4
SC trip current level
a1
a2
SC reference voltage
RESET
a8
a7
Delay by RC filtering
a5
[B] Under-Voltage Protection (N-side, UVD)
b1. Control supply voltage V D exceeds under voltage reset level (UVDr), but IGBT turns ON by next ON signal (LH).
(IGBT of each phase can return to normal state by inputting ON signal to each phase.)
b2. Normal operation: IGBT ON and outputs current.
b3. VD level drops to under voltage trip level. (UVDt).
b4. All N-side IGBTs turn OFF in spite of control input condition.
b5. Fo outputs for tFo=minimum 20μs, but output is extended during VD keeps below UVDr.
b6. VD level reaches UVDr.
b7. Normal operation: IGBT ON and outputs current.
Control input
Protection circuit state
RESET
SET
Control supply voltage VD
UVDr
b1
UVDt
b3
Output current Ic
b2
b4
RESET
b6
b7
Error output Fo
b5
Publication Date : October 2013
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