GCU04AA-130_09 Datasheet, PDF (6/6 Pages) Mitsubishi Electric Semiconductor – GCT (Gate Commutated Turn-off) THYRISTOR UNIT HIGH POWER INVERTER USE PRESS PACK TYPE

MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU04AA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
10³
7
5
3
2
10²
7
Tj=125°C
5
Tj=25°C
3
2
10¹
0 1 2 3 4 5 6 7 8 9 10
ON-STATE VOLTAGE VTM (V)
Eon VS IT (Max)
1.0
CONDITION
VD=3000V, Tj=125°C
0.8 ^{di/dt=1000A/µs}
Cs=0.06µF, Rs=15Ω
0.6
0.4
0.2
0.0
0
100 200 300 400 500
TURN ON CURRENT IT (A)
Eoff VS IT (Max)
4
CONDITION
3.5 VD=3000V, VDM=VD+2.5×IT
Tj=125°C, Cs=0.06µF
3 Rs=15Ω
2.5
2
1.5
1
0.5
0
0 100 200 300 400 500
TURN OFF CURRENT IT (A)
0.060
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
0.050
0.040
0.030
0.020
0.010
0.000
10^–3 2 3 5 710^–2 2 3 5 710^–1 2 3 5 7 10⁰ 2 3 5 7 10¹
TIME (S)
6
Erec VS IT (Max)
6
CONDITION
5
VR=3000V, Tj=125°C
di/dt=1000A/µs
Cs=0.06µF, Rs=15Ω
4
3
2
1
0
0 100 200 300 400 500
ON-STATE CURRENT IT (A)
Mar. 2009