GCU04AA-130_09 Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – GCT (Gate Commutated Turn-off) THYRISTOR UNIT HIGH POWER INVERTER USE PRESS PACK TYPE

MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU04AA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
VD
IT
VD
td
tgt
tfd
diG/dt
IGM IG
ts
trd
t(Eoff) = 100µs
tw
VRG
diGQ/dt
Control signal
VRG
IGQ
td ; 0VRG ~ 0.9VD
tgt ; 0VRG ~ 0.1VD
ts ; 0VRG ~ 0.9IT
diG/dt ; 0.1IGM ~ 0.9IGM
tw ; 0VRG ~ 0.9IGM
diGQ/dt ; 0.1IRG ~ 0.9IRG
tfd ; 50% on signal ~ 0VRG
trd ; 50% off signal ~ 0VRG
Integration area for Eoff ; 5%VD ~ until 100µs
Fig. 1 Turn-on and Turn-off waveform
L
Rs
VD
DUT
Cs
Fig. 2 Turn-on test circuit
ANL
L (load)
VD
DUT
FWDi
Rc
CDi
Lc
Cc
Fig. 3 Turn-off test circuit
(With clamp circuit)
IT
0
[ ] ^{QRR = (trr×IRM)/2}
Integration area for Erec ; 0IT ~ until 100µs
t(Erec) = 100µs
trr
di/dt (0 ~ 50%IRM)
50%IT
50%IRM
90%IRM
VR
VRM
Fig. 4 Reverse recovery waveform
ANL
L (load)
VD
DUT
Rs
DUT
Cs
Rs
Cs
Fig. 5 Turn-off and Reverse recovery test circuit
Mar. 2009
4