CM225DX-24S1 Datasheet, PDF (6/10 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM225DX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
OUTPUT CHARACTERISTICS
(TYPICAL)
T _j =25 °C
450
V_GE=20 V
400
15 V
350
(Chip)
12 V
300
11 V
250
200
10 V
150
100
9V
50
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE V_CE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
T _j =25 °C
10
(Chip)
8
I_C=450 A
I_C=225 A
6
I_C=90 A
4
2
0
6
8
10
12
14
16
18
20
GATE-EMITTER VOLTAGE V_GE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
V_GE=15 V
3.5
(Chip)
3
T _j =150 °C
T _j =125 °C
2.5
2
1.5
T _j =25 °C
1
0.5
0
0
100
200
300
400
COLLECTOR CURRENT I_C (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
1000
T _j =125 °C
(Chip)
T _j =150 °C
100
T _j =25 °C
10
0
0.5
1
1.5
2
2.5
3
3.5
4
EMITTER-COLLECTOR VOLTAGE V_EC (V)
Publication Date : December 2013
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