CM225DX-24S1 Datasheet, PDF (2/10 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM225DX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (T_j=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
Item
Conditions
V_CES
Collector-emitter voltage
G-E short-circuited
V_GES
I_C
I_CRM
P_tot
I_E
I_ERM
(Note1)
(Note1)
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
C-E short-circuited
DC, T_C=96 °C ^{(Note2, 4)}
Pulse, Repetitive, V_GE=15 V
T_C=25 °C ^{(Note2, 4)}
DC ^(Note2)
Pulse, Repetitive ^(Note3)
(Note3)
MODULE
Symbol
Item
Conditions
V_isol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
T_jmax
T_Cmax
Maximum junction temperature
Maximum case temperature
Instantaneous event (overload)
(Note4)
T_jop
Operating junction temperature
Continuous operation (under switching)
T_stg
Storage temperature
-
Rating
Unit
1200
V
± 20
V
225
A
450
1250
W
225
A
450
Rating
Unit
4000
V
175
°C
125
-40 ~ +150
°C
-40 ~ +125
ELECTRICAL CHARACTERISTICS (T _j =25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
I_CES
I_GES
V_GE(th)
V_CEsat
(Terminal)
V_CEsat
(Chip)
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
V_CE=V_CES, G-E short-circuited
-
V_GE=V_GES, C-E short-circuited
-
I_C=22.5 mA, V_CE=10 V
5.4
I_C=225 A, V_GE=15 V,
T _j =25 °C
-
Refer to the figure of test circuit T _j =125 °C
-
(Note5)
T _j =150 °C
-
I_C=225 A,
T _j =25 °C
-
V_GE=15 V,
(Note5)
T _j =125 °C
-
T _j =150 °C
-
-
1.0
mA
-
0.5
μA
6.0
6.6
V
1.90
2.35
2.10
-
V
2.15
-
1.80
2.25
2.00
-
V
2.05
-
C_ies
Input capacitance
-
-
20
C_oes
C_res
Output capacitance
Reverse transfer capacitance
V_CE=10 V, G-E short-circuited
-
-
4.0
nF
-
-
0.33
Q_G
t_d(on)
t_r
t_d(off)
t_f
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_CC=600 V, I_C=225 A, V_GE=15 V
V_CC=600 V, I_C=225 A, V_GE=±15 V,
R_G=1.5 Ω, Inductive load
-
420
-
nC
-
-
800
-
-
200
ns
-
-
600
-
-
300
V (Note1)
EC
(Terminal)
V (Note1)
EC
(Chip)
t (Note1)
rr
Q (Note1)
rr
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
I_E=225 A, G-E short-circuited,
T _j =25 °C
-
Refer to the figure of test circuit T _j =125 °C
-
(Note5)
T _j =150 °C
-
I_E=225 A,
T _j =25 °C
-
G-E short-circuited,
T _j =125 °C
-
(Note5)
T _j =150 °C
-
V_CC=600 V, I_E=225 A, V_GE=±15 V,
-
R_G=1.5 Ω, Inductive load
-
2.75
3.55
2.30
-
V
2.20
-
2.65
3.45
2.20
-
V
2.10
-
-
300
ns
6.0
-
μC
E_on
E_off
E ^(Note1)
rr
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
V_CC=600 V, I_C=I_E=225 A,
V_GE=±15 V, R_G=1.5 Ω, T _j =150 °C,
Inductive load
-
21.7
-
mJ
-
23.1
-
-
17.1
-
mJ
R_CC'+EE'
Internal lead resistance
Main terminals-chip, per switch,
T_C=25 °C ^(Note4)
-
-
1.0
mΩ
r_g
Internal gate resistance
Per switch
-
3.2
-
Ω
Publication Date : December 2013
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