QM30HA-HB Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

MITSUBISHI TRANSISTOR MODULES
QM30HA-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
500
400
300
200
100
0
10 ⁰ 2 3 4 5 7 10 ¹ 2 3 4 5 7 10 ²
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
10 ⁰ 2 3 5 710 ¹ 2 3
2.0
1.6
1.2
0.8
0.4
0
10 ^–3 2 3 5 710 ^–2 2 3 5 7 10 ^–12 3 5 7 10 ⁰
TIME (s)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
10 ²
10 ²
7
VCC=300V
5
IB1=60mA
3
IB2=–0.6A
2
10 ¹ Irr
7
5
3
2
10 ^{0 Qrr}
7
5
3
2
trr
10 ^–1
10 ⁰ 2 3
5 7 10 ¹ 2 3
10 ¹
10 ⁰
Tj=25°C
Tj=125°C _{10 –1}
5 7 10 ² 2 3 5 7 10 ³
FORWARD CURRENT IF (A)
Feb.1999