QM30HA-HB Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
10 ¹
7
5 ts
4
3
tf
2
10 ⁰
7
5
4 ^VCC=300V
3 ^IB1=60mA
2
IC=30A
Tj=25°C
Tj=125°C
10 ^–1
10 ^–1 2 3 4 5 7 10⁰
2 3 4 5 7 10¹
BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA
10 ²
7
100µs
5
3
2
DC
1ms
500µs
10 ¹
7
5
3
2
10 ⁰
7
5
3
2
TC=25°C
NON–REPETITIVE
10 ^–1
10 ⁰ 2 3 5 7 10 ¹ 2 3
5 7 10 ² 2 3
5 7 10 ³
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10 ⁰ 2 3 5 710 ¹ 2 3 5 710 ²
0.5
0.4
0.3
0.2
0.1
0
10 ^–3 2 3 5 710 ^–2 2 3 5 710 ^–12 3 5 7 10 ⁰
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM30HA-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA
80
Tj=125°C
70
60
IB2=–0.6A
50
40
IB2=–3.0A
30
20
10
0
0 100 200 300 400 500 600 700 800
COLLECTOR-EMITTER VOLTAGE VCE (V)
DERATING FACTOR OF F. B. S. O. A.
100
SECOND
90
BREAKDOWN
AREA
80
70
60
50
COLLECTOR
40
DISSIPATION
30
20
10
0
0 20 40 60 80 100 120 140 160
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
10 ²
7
5
4
3
2
10 ¹
7
5
4
3
2
Tj=25°C
Tj=125°C
10 ⁰
0.4 0.8 1.2 1.6 2.0 2.4
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999