M5M5V32R16J-10 Datasheet, PDF (5/8 Pages) Mitsubishi Electric Semiconductor – 524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM

MITSUBISHI LSIs
M5M5V32R16J,TP-10,-12,-15
524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
(4)TIMING DIAGRAMS
Read cycle 1
A 0~14 ^VIH
VIL
DQ1~16 ^VOH
VOL
tv (A)
PREVIOUS DATA VALID
/W=H /LB=L
/S=L /UB=L
/OE=L
t CR
ta (A)
UNKNOWN
tv (A)
DATA VALID
Read cycle 2 (Note 4)
VIH
/S
VIL
t CR
ta (S)
(Note 5)
ten (S)
(Note 5)
tdis (S)
DQ1~16 ^VOH
VOL
ICC1
Icc
ICC2
UNKNOWN
tPU
50%
DATA VALID
tPD
50%
/W=H /UB=L
/OE=L /LB=L
Note 4. Addresses valid prior to or coincident with /S transition low.
5. Transition is measured ±500mv from steady state voltage with specified loading in Figure 2.
Read cycle 3 (Note 6)
VIH
/OE
VIL
t CR
ta(OE)
(Note 5)
tdis (OE)
(Note 5) _{ten (OE)}
DQ1~16 ^VOH
VOL
/W=H /UB=L
/S=L /LB=L
UNKNOWN
DATA VALID
Note 6. Addresses and /S valid prior to /OE transition low by (ta(A)-ta(OE)), (ta(S)-ta(OE))
MITSUBISHI
ELECTRIC
5