CM1800HC-34H_09 Datasheet, PDF (5/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1800HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7 ^{VGE = 0V, Tj = 25°C}
5 ^{f = 100kHz}
3
2
Cies
10²
7
5
3
2
Coes
10¹
7
Cres
5
3
2
101⁰_{0-1 2 3 5 7100 2 3 5 7101 2 3 5 7102}
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 850V, IC = 1800A
Tj = 25°C
16
12
8
4
0
0
5
10
15
20
25
GATE CHARGE (µC)
2000
1600
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
VCC = 850V, VGE = ±15V
RG(on) = RG(off) = 0.3Ω
Eon
Tj = 125°C, Inductive load
1200
Eoff
800
400
Erec
0
0 600 1200 1800 2400 3000 3600
COLLECTOR CURRENT (A)
3000
2500
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
VCC = 850V, IC = 1800A
VGE = ±15V
Tj = 125°C, Inductive load
Eon
2000
1500
Eoff
1000
500
0
0
Erec
0.5
1
1.5
2
2.5
GATE RESISTANCE (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005