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CM1800HC-34H_09 Datasheet, PDF (3/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1800HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
Item
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λgrease = 1W/m·K
Limits
Unit
Min
Typ
Max
â
â
8.0 K/kW
â
â
13.0 K/kW
â
7.0
â K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
Conditions
M
â
CTI
da
ds
LC-E(int)
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
Limits
Unit
Min
Typ
Max
7.0
â
13.0
3.0
â
6.0 N·m
1.0
â
2.0
â
1.5
â
kg
600
â
â
â
19.5
â
â
mm
32.0
â
â
mm
â
10
â
nH
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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