CM1500HC-66R_12 Datasheet, PDF (5/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
1000
Cies
100
10
Co es
VGE = 0V, Tj = 25°C
f = 100kHz
Cres
1
0.1
1
10
100
Collector-Emitter Voltage [V]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
8
VCC = 1800V, VGE = ±15V
7
RG(on) = 1.6Ω, RG(off) = 5.6Ω
L_S = 100nH, Tj = 125°C
Inductive load
6
Eon
5
4
Eoff
3
2
E re c
1
0
0 500 1000 1500 2000 2500 3000
Collector Current [A]
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCE = 1800V, IC = 1500A
Tj = 25°C
15
10
5
0
-5
-10
-15
0
5
10
15
20
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
8
VCC = 1800V, VGE = ±15V
7
RG(on) = 1.6Ω, RG(off) = 5.6Ω
L_S = 100nH, Tj = 150°C
Inductive load
Eon
6
5
4
Eoff
3
2
E re c
1
0
0 500 1000 1500 2000 2500 3000
Collector Current [A]
December 2012 _(HVM-1054-D)
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